The IRF3205 from International Rectifier is a robust N-channel HEXFET power MOSFET in a TO-220AB package, designed for high efficiency and reliability across a wide range of applications. It boasts extremely low on-resistance per silicon area, a dynamic dv/dt rating, and fast switching capabilities.
Key Features & Specifications:
- Transistor Type: N-Channel
- Package Type: TO-220
- Drain-to-Source Voltage (Vds): 55V (Max)
- Gate-to-Source Voltage (Vgs): ±20V (Max)
- Continuous Drain Current (Id): 110A at Vgs 10V, 25°C (Max)
- Pulsed Drain Current (Idm): 390A (Max)
- On-Resistance (Rds(on)): 8mΩ at Vgs 10V
- Power Dissipation (Pd): 200W (Max)
- Minimum Gate Threshold Voltage (Vgs(th)): 2V to 4V (Required to conduct)
- Operating & Storage Junction Temperature: -55°C to 175°C
Applications:
- Power Management Systems
- Industrial Applications
- Portable Devices
- Consumer Electronics
- Battery Chargers and Battery Management Systems
- Fast Switching Applications (e.g., UPS, Battery Backup systems)
- Solar-related Applications
- Uninterruptible Power Supplies
- Motor Drivers
- High Power Audio Amplifiers
Replacement and Equivalent MOSFETs:
- IRFB3206
- IRFB3256
- IRFB3307
- IRFB7540
Safe Operating Practices:
To ensure long-term performance and reliability, it is recommended to operate the IRF3205 at least 20% below its maximum ratings. For example:
- Do not exceed a load voltage of 44V DC.
- Do not drive a continuous load of more than 88A.
- Use a proper heatsink with the transistor.
- Store and operate the device within the temperature range of -55°C to 175°C.
Official Datasheet:
Additional Resources:
- Components101 – IRF3205 Pinout, Datasheet, Features & Alternatives
- JAK Electronics – IRF3205 MOSFET: Datasheet, Features, Equivalent
- WatElectronics.com – IRF3205 MOSFET : Datasheet, Working & Its Applications
Package Includes:
- 1 x IRF3205 MOSFET
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