اگر آپ کو فون پر رابطہ کرنے کے دوران مسئلہ درپیش ہے تو براہ کرم 03484122281 پر واٹس ایپ پر رابطہ کریں۔ ملک میں غیر یقینی صورتحال کی وجہ سے قیمتیں حتمی نہیں ہیں۔ لہذا براہ کرم پرسکون رہیں۔

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IGBT p75v120fdb2

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The  is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses.

Key Specifications:

  • Collector-Emitter Voltage (V<sub>CES</sub>): 1200V
  • Collector Current (I<sub>C</sub>): 75A
  • Package Type: TO-247PLUS

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The  is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses.

Key Specifications:

  • Collector-Emitter Voltage (V<sub>CES</sub>): 1200V
  • Collector Current (I<sub>C</sub>): 75A
  • Package Type: TO-247PLUS
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The  is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses.

Key Specifications:

  • Collector-Emitter Voltage (V<sub>CES</sub>): 1200V
  • Collector Current (I<sub>C</sub>): 75A
  • Package Type: TO-247PLUS

Reviews

There are no reviews yet.

Be the first to review “IGBT p75v120fdb2”

Your email address will not be published. Required fields are marked *

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