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160A 750V IGBT BYD160T75SD BGM160T75SD

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The BYD160T75SD/BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast-recovery anti-parallel diode, making it suitable for high-speed switching applications.

Key Specifications:

  • Collector-Emitter Voltage (V<sub>CES</sub>): 750V
  • Collector Current (I<sub>C</sub>): 160A
  • Package Type: TO-247 Plus

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The BYD160T75SD/BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast-recovery anti-parallel diode, making it suitable for high-speed switching applications.

Key Specifications:

  • Collector-Emitter Voltage (V<sub>CES</sub>): 750V
  • Collector Current (I<sub>C</sub>): 160A
  • Package Type: TO-247 Plus
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The BYD160T75SD/BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast-recovery anti-parallel diode, making it suitable for high-speed switching applications.

Key Specifications:

  • Collector-Emitter Voltage (V<sub>CES</sub>): 750V
  • Collector Current (I<sub>C</sub>): 160A
  • Package Type: TO-247 Plus

Reviews

There are no reviews yet.

Be the first to review “160A 750V IGBT BYD160T75SD BGM160T75SD”

Your email address will not be published. Required fields are marked *

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