© Copyright 2026. All Rights Reserved
60A 1000V IGBT G60N100 NPT Trench IGBT with Soft Recovery Diode, TO-264 Package
The FGL60N100BNTD, also known as G60N100, is a high-voltage, high-current NPT trench IGBT (Insulated Gate Bipolar Transistor) with an integrated ultra-fast soft recovery diode. It is designed for hard-switching applications requiring high reliability, efficiency, and ruggedness, such as inverters, UPS systems, welding equipment, and industrial power converters.
With a 1000V blocking voltage, 60A continuous current, and pulsed rating up to 200A, this IGBT is ideal for demanding switching environments. The TO-264 (TO-3PL) package offers excellent thermal handling for high-power assemblies.
| Parameter | Value |
|---|---|
| Collector–Emitter Voltage (V<sub>CES</sub>) | 1000 V |
| Continuous Collector Current (I<sub>C</sub>) | 60 A @ 25 °C |
| Pulsed Collector Current (I<sub>CM</sub>) | 200 A |
| Gate–Emitter Voltage (V<sub>GE</sub>) | ±25 V |
| Saturation Voltage (V<sub>CE(sat)</sub>) | Typ. 2.5 V @ 60 A |
| Gate Threshold Voltage (V<sub>GE(th)</sub>) | 4.0 – 7.0 V |
| Diode Forward Voltage (V<sub>F</sub>) | ~1.8 V @ 60 A |
| Turn-On Delay Time | ~140 ns |
| Turn-Off Delay Time | ~630 ns |
| Total Gate Charge (Q<sub>g</sub>) | ~275 nC |
| Power Dissipation | 180 W @ 25 °C |
| Thermal Resistance (R<sub>θJC</sub>) | 0.69 °C/W |
| Junction Temperature Range (T<sub>j</sub>) | –55 °C to +150 °C |
| Package | TO‑264 / TO‑3PL (3-pin) |
High voltage handling up to 1000V
Low conduction losses with V<sub>CE(sat)</sub> ~2.5V
Built-in ultra-fast diode for efficient half-bridge operation
Reliable switching performance under high surge and thermal stress
NPT trench structure for enhanced ruggedness and soft switching
Excellent for use in parallel configurations
UPS (Uninterruptible Power Supply) systems
Welding machines and induction heaters
Motor drives and industrial inverters
High-frequency power supplies
General-purpose DC–AC conversion