The FGH40N120AN is a 1200V, 40A Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor. This component is designed for high-speed switching applications, offering low conduction and switching losses. It’s commonly used in induction heating, motor control, general-purpose inverters, and uninterruptible power supplies (UPS).
Key Specifications:
- Collector-Emitter Voltage (V<sub>CES</sub>): 1200V
- Collector Current (I<sub>C</sub>): 40A at 100°C; 64A at 25°C
- Gate-Emitter Voltage (V<sub>GES</sub>): ±25V
- Collector Dissipation (P<sub>D</sub>): 417W at 25°C
- Saturation Voltage (V<sub>CE(sat)</sub>): 2.6V typical at I<sub>C</sub> = 40A
- Package Type: TO-247
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