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BGM160T65SD is a high-performance IGBT (Insulated Gate Bipolar Transistor) with advanced 650V TrenchFS technology, designed for applications that demand high efficiency and reliability. This IGBT features low conduction and switching losses, positive temperature coefficient, and an integrated soft and fast recovery anti-parallel diode, making it ideal for use in automotive motor drives.
Key Highlights:
Voltage rating: 650V
Current rating: 160A
Low V<sub>CE(sat)</sub>: 1.6V
Short circuit withstand time: 5μs
Max junction temperature: 175°C
Optimized for motor control and inverter circuits
This component is widely used in electric vehicles (EV), industrial inverters, and high-efficiency power modules.
Package Type: TO-247 Plus (TO247-3)
Marking: 160T65SD