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The FGY160T65SPD-F085 is a high-performance Field-Stop Trench IGBT designed for demanding industrial and automotive applications. Rated at 650 volts and 160 amps, it combines low conduction loss with high-speed switching and excellent thermal efficiency. It also integrates a soft, fast-recovery diode for enhanced performance in half-bridge and inverter circuits.
Engineered for reliability and efficiency, this IGBT offers low saturation voltage, fast switching, and rugged short-circuit capability. It is AEC-Q101 qualified, making it a dependable choice for automotive powertrain systems, industrial inverters, EV charging stations, and motor drives.
Collector-Emitter Voltage: 650V
Collector Current: 160A continuous, 240A max at 25°C
Pulsed Collector Current: Up to 480A
Saturation Voltage (V<sub>CE(sat)</sub>): Typically 1.6V at 160A
Gate-Emitter Voltage: ±20V (Threshold ~5V)
Maximum Junction Temperature: 175°C
Switching Speeds:
Turn-on Delay: ~53ns
Turn-off Delay: ~98ns
Rise/Fall Time: ~197ns / ~141ns
Switching Energy:
Turn-on Energy: ~12.4mJ
Turn-off Energy: ~5.7mJ
Power Dissipation: Up to 882W
Thermal Resistance (R<sub>θJC</sub>): 0.17°C/W
Built-in Diode: Soft and fast recovery
Package Type: TO-247-3LD
EV powertrains and electric vehicle inverters
Industrial motor drives
UPS systems
Welding machines
High-efficiency DC/AC power conversion
Battery charging stations (EV chargers)
The package includes:
1 x Onsemi 160A 650V FGY160T65SPD Onsemi IGBT